*New technology for high voltage device
*Low on-resistance and low conduction losses
*Ultra Low Gate Charge cause lower driving requirements
*100% Avalanc.

VDS RDS(ON) ID 650 190 20 V mΩ A Features
*New technology for high voltage device
*Low on-resistance and lo.

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap.

NCE20N65

NCE20N65F

NCE20N60

NCE20N60F

NCE20N60T

NCE20N50

NCE20N50F

NCE20N50T

NCE20NF50

NCE20NF50F

NCE20NF50T

NCE20NF60

NCE20NF60F